Integrated Microelectronic Devices Physics and Modeling, 1st edition J A. del Alamo-Test Bank

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A recent deal with microelectronic gadget engineering

Microelectronics is a 50-year-old engineering self-discipline nonetheless current course of quick evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor gadget physics that is associated to modern nanoelectronics. The central purpose is to present the fundamentals of semiconductor gadget operation with relevance to modern built-in microelectronics. Emphasis is devoted to frequency response, construction, geometrical outcomes, parasitic factors and modeling in built-in microelectronics devices (transistors and diodes). Together with this focus, the concepts found listed below are extraordinarily related in numerous gadget contexts.

 

This textual content material is acceptable for a one-semester junior or senior-level course by deciding on the doorway sections of chosen chapters (e.g. 1-9). It might even be utilized in a two-semester senior-level or a graduate-level course by benefiting from the additional superior sections.

 

Regarding the Author

Jesús A. del Alamois Donner Professor and Professor of Electrical Engineering inside the Division of Electrical Engineering and Laptop Science at Massachusetts Institute of Experience. He is moreover Director of the Microsystems Experience Laboratories at MIT. He obtained a Telecommunications Engineer diploma from the Universidad Politécnica de Madrid (Spain) and MS and PhD ranges in Electrical Engineering from Stanford Faculty. Over time, Prof. del Alamo has been involved in evaluation on transistors and totally different digital devices in numerous supplies strategies. He has labored on Si photograph voltaic cells, Si bipolar junction transistors, Si metallic―oxide―semiconductor field-effect transistors (MOSFETs), SiGe heterostructure devices, GaAs pseudomorphic extreme electron mobility transistors (PHEMTs), InGaAs extreme electron mobility transistors (HEMTs) and MOSFETs, InGaSb HEMTs and MOSFETs, GaN HEMTs and MOSFETs, and further currently diamond MOSFETs. Prof. del Alamo teaches undergraduate and graduate-level applications at MIT in electronics, electron devices and circuits, and superior semiconductor gadget physics. He has acquired a lot of instructing and achievement awards at MIT: the 1992 Baker Memorial Award for Excellence in Undergraduate Educating, the 1993 H. E. Edgerton Junior College Achievement Award, the 2001 Louis D. Smullin Award for Excellence in Educating, and the 2002 Amar Bose Award for Excellence in Educating. In 2012, Prof. del Alamo was awarded the IEEE Electron Devices Society Education Award “for pioneering contributions to the occasion of on-line laboratories for microelectronics education on a worldwide scale”.

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Integrated Microelectronic Devices Physics and Modeling, 1st edition J A. del Alamo-Test Bank
Integrated Microelectronic Devices Physics and Modeling, 1st edition J A. del Alamo-Test Bank

Original price was: $55.00.Current price is: $45.97.

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